SQV120N06-4M7L_GE3

new-10%

Manufacturer part number:SQV120N06-4M7L_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 120A TO262-3

Case Package:SOT-23

Datasheet:SQV120N06-4M7L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0047Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	320 mJ
Max Junction Temperature (Tj)	175°C
Height	14.86mm
RoHS Status	RoHS Compliant