IXTK120P20T

new-10%

Manufacturer part number:IXTK120P20T

Manufacturer:IXYS

Description:N-Channel 200 V 30 mOhm Through Hole Power Mosfet - TO-264

Case Package:SOT-23

Datasheet:IXTK120P20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Packaging	Tube
Published	2013
Series	TrenchP™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Max Power Dissipation	1.04kW
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	73000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	740nC @ 10V
Drain to Source Voltage (Vdss)	200V
Continuous Drain Current (ID)	120A
Drain-source On Resistance-Max	0.03Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free