NVMFD5853NLT1G

new-10%

NVMFD5853NLT1G

Manufacturer part number:NVMFD5853NLT1G

Manufacturer:ON Semiconductor

Description:NVMFD5853NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVMFD5853NLT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	3W
Terminal Form	FLAT
Pin Count	8
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	10m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drain to Source Voltage (Vdss)	40V
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	34A
Drain-source On Resistance-Max	0.015Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	165A
Avalanche Energy Rating (Eas)	40 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.05mm
Length	6.1mm
Width	5.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free