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STS9D8NH3LL

STS9D8NH3LL

STS9D8NH3LL

STMicroelectronics

STS9D8NH3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

SOT-23

STS9D8NH3LL Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS9D8
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 857pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A 9A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 32ns
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.384721 $0.384721
10 $0.362944 $3.62944
100 $0.342400 $34.24
500 $0.323019 $161.5095
1000 $0.304735 $304.735
STS9D8NH3LL Product Details

STS9D8NH3LL           Description


This device uses the latest advanced design rules of ST?ˉs STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.


STS9D8NH3LL                Features


Optimal RDS(on) x Qg trade-off @ 4.5V

?? Conduction losses reduced

?? Switching losses reduced


STS9D8NH3LL               Application


?? Switching applications


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