NVMFD6H840NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NVMFD6H840NLT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
6.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 96μA
Input Capacitance (Ciss) (Max) @ Vds
2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C
14A Ta 74A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Drain to Source Voltage (Vdss)
80V
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.88000
$2.88
500
$2.8512
$1425.6
1000
$2.8224
$2822.4
1500
$2.7936
$4190.4
2000
$2.7648
$5529.6
2500
$2.736
$6840
NVMFD6H840NLT1G Product Details
NVMFD6H840NLT1G Description
NVMFD6H840NLT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low QG and capacitance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including switching applications, synchronous rectification, and uninterruptible power supplies.