NVMFS5113PLWFT1G

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NVMFS5113PLWFT1G

Manufacturer part number:NVMFS5113PLWFT1G

Manufacturer:ON Semiconductor

Description:NVMFS5113PLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVMFS5113PLWFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	5
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	14m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain-source On Resistance-Max	0.014Ohm
Pulsed Drain Current-Max (IDM)	415A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	315 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free