SISA14DN-T1-GE3

new-10%

Manufacturer part number:SISA14DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 20A 1212-8

Case Package:SOT-23

Datasheet:SISA14DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	5.1mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	240
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	S-PDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.57W Ta 26.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Continuous Drain Current (ID)	20A
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	11.25 mJ
RoHS Status	ROHS3 Compliant