AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
18A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5.5 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
72A
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
247 mJ
Recovery Time
241 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
19.8mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.28000
$1.28
50
$1.03300
$51.65
100
$0.91140
$91.14
500
$0.72026
$360.13
1,000
$0.58126
$0.58126
IRF640NPBF Product Details
IRF640NPBF Description
IRF640NPBF MOSFET utilizes proven silicon processes. IRF640NPBF Infineon Technologies provide designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. MOSFET IRF640NPBF is available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.