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IRF640NPBF

IRF640NPBF

IRF640NPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 150m Ω @ 11A, 10V ±20V 1160pF @ 25V 67nC @ 10V TO-220-3

SOT-23

IRF640NPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 150mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 72A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 247 mJ
Recovery Time 241 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 19.8mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.28000 $1.28
50 $1.03300 $51.65
100 $0.91140 $91.14
500 $0.72026 $360.13
1,000 $0.58126 $0.58126
IRF640NPBF Product Details

IRF640NPBF Description

 

IRF640NPBF MOSFET utilizes proven silicon processes. IRF640NPBF Infineon Technologies provide designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. MOSFET IRF640NPBF is available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

 

 

IRF640NPBF Features

 

Low frequency

Silicon optimized

Increased ruggedness

SOA

Industry standard

 

 

IRF640NPBF Applications

 

Inverters

DC motors

SMPS

Load switches

Battery applications


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