NVMFS5830NLWFT3G

new-10%

Manufacturer part number:NVMFS5830NLWFT3G

Manufacturer:ON Semiconductor

Description:MOSFET Pwr MOSFET 40V 185A 2.3mOhm SGL N-CH

Case Package:SOT-23

Datasheet:NVMFS5830NLWFT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 158W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Ta
Gate Charge (Qg) (Max) @ Vgs	113nC @ 10V
Rise Time	32ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0036Ohm
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free