NVMFS5C410NLT3G

new-10%

Manufacturer part number:NVMFS5C410NLT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 48A SO8FL

Case Package:SOT-23

Datasheet:NVMFS5C410NLT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 167W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8862pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Ta 315A Tc
Gate Charge (Qg) (Max) @ Vgs	143nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	315A
Drain-source On Resistance-Max	0.0013Ohm
Pulsed Drain Current-Max (IDM)	900A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	706 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free