NVMFS5C426NWFAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NVMFS5C426NWFAFT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 hours ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
3.8W Ta 128W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
41A Ta 235A Tc
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS5C426NWFAFT1G Product Details
NVMFS5C426NWFAFT1G Description
NVMFS5C426NWFAFT1G is a 40v Single N-Channel Power MOSFET. The onsemi NVMFS5C426NWFAFT1G can be applied in Reverse battery protection, Switching power supplies, and Power switches due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVMFS5C426NWFAFT1G is in the SO-8FL package with 128W power dissipation.
NVMFS5C426NWFAFT1G Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C426NWF ? Wettable Flank Option for Enhanced Optical Inspection
AEC?Q101 Qualified and PPAP Capable
Pb?Free and are RoHS Compliant
NVMFS5C426NWFAFT1G Applications
Reverse battery protection
Switching power supplies
Power switches – High Side Driver, Low Side Driver, H-Bridges