RCX511N25 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 197.9 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7000pF @ 25V.This device conducts a continuous drain current (ID) of 51A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 204A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

RCX511N25 Features

the avalanche energy rating (Eas) is 197.9 mJ
a continuous drain current (ID) of 51A
based on its rated peak drain current 204A.
a 250V drain to source voltage (Vdss)

RCX511N25 Applications

There are a lot of ROHM Semiconductor
RCX511N25 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching