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STFW40N60M2

STFW40N60M2

STFW40N60M2

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 88m Ω @ 17A, 10V ±25V 2500pF @ 100V 57nC @ 10V 600V ISOWATT218FX

SOT-23

STFW40N60M2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STFW
Power Dissipation-Max 63W Tc
Element Configuration Single
Turn On Delay Time 20.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 88m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 25V
Height 26.7mm
Length 15.7mm
Width 5.7mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.34000 $10.34
30 $8.47867 $254.3601
120 $7.65158 $918.1896
510 $6.41080 $3269.508
1,020 $5.58360 $5.5836
STFW40N60M2 Product Details

STFW40N60M2 Overview


A device's maximum input capacitance is 2500pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 96 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

STFW40N60M2 Features


a continuous drain current (ID) of 34A
the turn-off delay time is 96 ns
a 600V drain to source voltage (Vdss)


STFW40N60M2 Applications


There are a lot of STMicroelectronics
STFW40N60M2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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