SI7620DN-T1-GE3

new-10%

Manufacturer part number:SI7620DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 150V 13A 5.2W 126mohm @ 10V

Case Package:SOT-23

Datasheet:SI7620DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Supplier Device Package	PowerPAK® 1212-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	126MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	3.8W Ta 5.2W Tc
Power Dissipation	3.8W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	126mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 75V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Input Capacitance	600pF
Drain to Source Resistance	103mOhm
Rds On Max	126 mΩ
Height	1.0668mm
Length	3.1496mm
Width	3.1496mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free