NVTFS4C08NTWG

new-10%

Manufacturer part number:NVTFS4C08NTWG

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R

Case Package:SOT-23

Datasheet:NVTFS4C08NTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 17 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Reach Compliance Code	not_compliant
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.1W Ta 31W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	31W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1113pF @ 15V
Current - Continuous Drain (Id) @ 25°C	17A Ta
Gate Charge (Qg) (Max) @ Vgs	18.2nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	55A
Drain-source On Resistance-Max	0.0059Ohm
Pulsed Drain Current-Max (IDM)	253A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free