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TSM22P10CZ C0G

  • TSM22P10CZ C0G
  • TSM22P10CZ C0G

TSM22P10CZ C0G

TSM22P10CZ C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) P-Channel 140mOhm @ 20A, 10V ±25V 2250pF @ 30V 42nC @ 10V 100V TO-220-3

SOT-23

TSM22P10CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
RoHS Status ROHS3 Compliant
TSM22P10CZ C0G Product Details

TSM22P10CZ C0G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2250pF @ 30V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

TSM22P10CZ C0G Features


a 100V drain to source voltage (Vdss)


TSM22P10CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM22P10CZ C0G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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