PHD22NQ20T,118 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1380pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 21.1A.Peak drain current is 42.2A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

PHD22NQ20T,118 Features

the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 42.2A.
a 200V drain to source voltage (Vdss)

PHD22NQ20T,118 Applications

There are a lot of NXP USA Inc.
PHD22NQ20T,118 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies