NVTFS5811NLWFTWG   Description

 P-channel MOSFET NVTFS5811NLWFTWG uses electrons to create current channels. This allows electrons to move quickly and easily through the current when the MOSFET is activated and turned on. Because of the special characteristics of N-channel MOSFET, for the same RDS (conduction) value, the carrier mobility is about 2-3 times that of P-channel, and the size of P-channel chip must be 2-3 times that of N-channel. Therefore, for high-current applications, the use of MOSFET transistor N-channel is usually preferred.

NVTFS5811NLWFTWG  Features

? Small Footprint (3.3 x 3.3 mm) for Compact Design

? Low RDS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Driver Losses

? NVTFS5811NLWF ? Wettable Flanks Product

? AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

NVTFS5811NLWFTWG    Applications

high-current applications