NXH80T120L2Q0SG

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Manufacturer part number:NXH80T120L2Q0SG

Manufacturer:ON Semiconductor

Description:NXH80T120L2Q0SG datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NXH80T120L2Q0SG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	50 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	Module
Operating Temperature	-40°C~150°C TJ
Published	2015
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	146W
Configuration	T-Type
Power - Max	146W
Input	Standard
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	65A
Current - Collector Cutoff (Max)	100μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	1.99nF
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 80A
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	1.99nF @ 20V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NXH80T120L2Q0SG Description

NXH80T120L2Q0SG transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes NXH80T120L2Q0SG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

NXH80T120L2Q0SG Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

NXH80T120L2Q0SG Applications

ISM applications

DC large signal applications

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