PN200A Overview

This device has a DC current gain of 300 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -400mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 250MHz.During maximum operation, collector current can be as low as 500mA volts.

PN200A Features

the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 250MHz

PN200A Applications

There are a lot of ON Semiconductor PN200A applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface