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PN2222G

PN2222G

PN2222G

ON Semiconductor

PN2222G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN2222G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating600mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PN2222
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage1.6V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 35
Turn Off Time-Max (toff) 285ns
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4640 items

PN2222G Product Details

PN2222G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.The collector emitter saturation voltage is 1.6V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.250MHz is present in the transition frequency.During maximum operation, collector current can be as low as 600mA volts.

PN2222G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz

PN2222G Applications


There are a lot of ON Semiconductor PN2222G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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