MPSW56RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSW56RLRPG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 250mA 1V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
MPSW56RLRPG Product Details
MPSW56RLRPG Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.In this part, there is a transition frequency of 50MHz.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MPSW56RLRPG Features
the DC current gain for this device is 50 @ 250mA 1V the vce saturation(Max) is 500mV @ 10mA, 250mA a transition frequency of 50MHz
MPSW56RLRPG Applications
There are a lot of Rochester Electronics, LLC MPSW56RLRPG applications of single BJT transistors.