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PN4258

PN4258

PN4258

ON Semiconductor

PN4258 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN4258 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -12V
Max Power Dissipation 350mW
Current Rating -200mA
Frequency 700MHz
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 700MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 3V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 12V
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 200mA
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 700MHz
Collector Base Voltage (VCBO) -12V
Emitter Base Voltage (VEBO) -4.5V
hFE Min 30
RoHS Status RoHS Compliant
Lead Free Lead Free
PN4258 Product Details

PN4258 Overview


In this device, the DC current gain is 30 @ 10mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at -4.5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.This product comes in a TO-92-3 device package from the supplier.The device exhibits a collector-emitter breakdown at 12V.Collector current can be as low as 200mA volts at its maximum.

PN4258 Features


the DC current gain for this device is 30 @ 10mA 3V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
the supplier device package of TO-92-3

PN4258 Applications


There are a lot of ON Semiconductor PN4258 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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