PN4392_D27Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
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PN4392_D27Z Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N4392
Power - Max
625mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0)
25mA @ 20V
Voltage - Cutoff (VGS off) @ Id
2V @ 1nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
60Ohms
PN4392_D27Z Product Details
PN4392_D27Z Description
The PN4392_D27Z is a JFET N-Channel 30 V 625 mW Through Hole TO-92-3. One of the most basic varieties of field-effect transistors is the junction-gate field-effect transistor (JFET). JFETs are three-terminal semiconductor devices that can be used to create amplifiers, switch or resistors that can be controlled electronically, or both.
JFETs are purely voltage-controlled, unlike bipolar junction transistors, which also require a biasing current. Between the source and drain terminals, an electric charge travels through a semiconducting channel. The channel is pinched, causing the electric current to be hindered or turned off entirely, by supplying a reverse bias voltage to a gate terminal. When there is no voltage between the source and gate terminals of a JFET, it is typically conducting. The JFET will be more resistant to current flow, which means less current will flow in the channel between the source and drain terminals if a potential difference of the right polarity is introduced between its gate and source terminals.
PN4392_D27Z Features
Fast switching
For low frequency operation, source and drain can be interchanged
Gate voltage that controls drain current
Single majority carrier
Small in size
PN4392_D27Z Applications
As a switch
As an amplifier
As a chopper
As a buffer
As voltage controlled resistors in the operational amplifiers