RFD15P05SM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFD15P05SM Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
80W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
150mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1150pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 20V
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
RFD15P05SM Product Details
RFD15P05SM Description
These are P-channel power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for applications such as switching voltage regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.