2N6661JTXP02

new-10%

Manufacturer part number:2N6661JTXP02

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD

Case Package:SOT-23

Datasheet:2N6661JTXP02 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	725mW Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	860mA Tc
Drain to Source Voltage (Vdss)	90V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	860mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.86A
Drain-source On Resistance-Max	4Ohm
DS Breakdown Voltage-Min	90V
Feedback Cap-Max (Crss)	10 pF
RoHS Status	Non-RoHS Compliant