RFP14N05     Description

  These are N-channel power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for applications such as switching voltage regulators, switching converters, motor drivers and relay drivers. This performance is achieved through a special gate oxide design that provides full rated conductance at gate bias in the 3V-5V range, thus facilitating true switching power control directly from logic-level (5V) integrated circuits.

RFP14N05       Features

? 14A, 50V

? rDS(ON) = 0.100?

? Temperature Compensating PSPICE? Model

? Can be Driven Directly from CMOS, NMOS, and

TTL Circuits

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175oC Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

RFP14N05    Applications

logic-level (5V) integrated circuits