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RFP15N05L

RFP15N05L

RFP15N05L

ON Semiconductor

RFP15N05L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP15N05L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.305224 $0.305224
10 $0.287948 $2.87948
100 $0.271649 $27.1649
500 $0.256272 $128.136
1000 $0.241767 $241.767
RFP15N05L Product Details

RFP15N05L Description


These are silicon gate power field effect transistors with an N-Channel enhancement mode designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. Integrated circuits can be used to operate these sorts.



RFP15N05L Features


? 5V Gate Drives Optimized Design


? QMOS, NMOS, and TTL circuits can be used to drive it.


? Automotive Drive Requirements Compliant



? Power Dissipation Limited (SOA)



? Switching Speeds in Nanoseconds



? Characteristics of Linear Transfer



RFP15N05L Applications


Switching applications


Related Part Number

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