RFP15N05L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP15N05L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
60W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
140mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.305224
$0.305224
10
$0.287948
$2.87948
100
$0.271649
$27.1649
500
$0.256272
$128.136
1000
$0.241767
$241.767
RFP15N05L Product Details
RFP15N05L Description
These are silicon gate power field effect transistors with an N-Channel enhancement mode designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. Integrated circuits can be used to operate these sorts.
RFP15N05L Features
? 5V Gate Drives Optimized Design
? QMOS, NMOS, and TTL circuits can be used to drive it.