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RFP4N100

  • RFP4N100 - RFP4N100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • RFP4N100 - RFP4N100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

RFP4N100

RFP4N100

ON Semiconductor

RFP4N100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP4N100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 20V
Drain to Source Voltage (Vdss) 1000V
RoHS StatusNon-RoHS Compliant
In-Stock:3808 items

RFP4N100 Product Details

RFP4N100 Description


The RFP4N100 is an N-Channel enhancement mode silicon gate power field-effect transistor. It can be operated directly from an integrated circuit.



RFP4N100 Features


  • 4.3A, 1000V

  • rDS(ON) = 3.5Ω

  • UIS Rating Curve (Single Pulse)

  • -55 ℃to 150 ℃ Operating Temperature

  • Related Literature



RFP4N100 Applications


  • Switching regulators

  • Switching converters

  • Motor drivers

  • Relay drivers


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