TPCC8066-H,LQ(S

new-10%

Manufacturer part number:TPCC8066-H,LQ(S

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 11A 8TSON-ADV

Case Package:SOT-23

Datasheet:TPCC8066-H,LQ(S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSVII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700mW Ta 17W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 10V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	2.1ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.3 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.019Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant