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RFP50N05L

RFP50N05L

RFP50N05L

ON Semiconductor

RFP50N05L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP50N05L Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
RFP50N05L Product Details

RFP50N05L  Description


The RFP50N06 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. 



RFP50N05L  Features


  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • 175°C Operating Temperature

  • 50A, 60V

  • rDS(ON)= 0.022Ω

  • Temperature Compensating PSPICE Model



RFP50N05L Applications


  • Other Industrial


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