RFP50N05L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP50N05L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
110W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 10V
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
4V 5V
Vgs (Max)
±10V
RFP50N05L Product Details
RFP50N05L Description
The RFP50N06 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.