SBC807-40LT3G Overview

DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.There is a transition frequency of 100MHz in the part.Collector current can be as low as 500mA volts at its maximum.

SBC807-40LT3G Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

SBC807-40LT3G Applications

There are a lot of ON Semiconductor SBC807-40LT3G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting