SBCW30LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SBCW30LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Base Part Number
BCW30
Pin Count
3
Configuration
Single
Power - Max
300mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
215 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
32V
Collector Base Voltage (VCBO)
32V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SBCW30LT1G Product Details
SBCW30LT1G Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBCW30LT1G Features
the DC current gain for this device is 215 @ 2mA 5V the vce saturation(Max) is 300mV @ 500μA, 10mA
SBCW30LT1G Applications
There are a lot of ON Semiconductor SBCW30LT1G applications of single BJT transistors.