SBCW66GLT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
SBCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
SBCW66GLT1G Applications
There are a lot of ON Semiconductor SBCW66GLT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
