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2SAR512P5T100

2SAR512P5T100

2SAR512P5T100

ROHM Semiconductor

2SAR512P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR512P5T100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 430MHz
Max Breakdown Voltage 30V
Frequency - Transition 430MHz
RoHS StatusROHS3 Compliant
In-Stock:18555 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.314971$0.314971
10$0.297142$2.97142
100$0.280323$28.0323
500$0.264455$132.2275
1000$0.249486$249.486

2SAR512P5T100 Product Details

2SAR512P5T100 Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 400mV @ 35mA, 700mA means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 430MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SAR512P5T100 Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
a transition frequency of 430MHz

2SAR512P5T100 Applications


There are a lot of ROHM Semiconductor 2SAR512P5T100 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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