2SAR512P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR512P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
430MHz
Max Breakdown Voltage
30V
Frequency - Transition
430MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.314971
$0.314971
10
$0.297142
$2.97142
100
$0.280323
$28.0323
500
$0.264455
$132.2275
1000
$0.249486
$249.486
2SAR512P5T100 Product Details
2SAR512P5T100 Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 400mV @ 35mA, 700mA means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 430MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SAR512P5T100 Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 400mV @ 35mA, 700mA a transition frequency of 430MHz
2SAR512P5T100 Applications
There are a lot of ROHM Semiconductor 2SAR512P5T100 applications of single BJT transistors.