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2SAR512P5T100

2SAR512P5T100

2SAR512P5T100

ROHM Semiconductor

2SAR512P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR512P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 430MHz
Max Breakdown Voltage 30V
Frequency - Transition 430MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.314971 $0.314971
10 $0.297142 $2.97142
100 $0.280323 $28.0323
500 $0.264455 $132.2275
1000 $0.249486 $249.486
2SAR512P5T100 Product Details

2SAR512P5T100 Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 400mV @ 35mA, 700mA means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 430MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SAR512P5T100 Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
a transition frequency of 430MHz

2SAR512P5T100 Applications


There are a lot of ROHM Semiconductor 2SAR512P5T100 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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