MMBT5089LT1G Overview

DC current gain in this device equals 400 @ 100μA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 50MHz.This device can take an input voltage of 25V volts before it breaks down.Collector current can be as low as 50mA volts at its maximum.

MMBT5089LT1G Features

the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz

MMBT5089LT1G Applications

There are a lot of ON Semiconductor MMBT5089LT1G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver