SFP9Z34 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
SFP9Z34 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
82W Tc
Element Configuration
Single
Power Dissipation
82W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
140mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1155pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
24ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
18A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
-60V
Input Capacitance
1.155nF
Drain to Source Resistance
140mOhm
Rds On Max
140 mΩ
RoHS Status
RoHS Compliant
SFP9Z34 Product Details
SFP9Z34 Description
SFP9Z34is a Power MOSFET which is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.