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SFP9Z34

SFP9Z34

SFP9Z34

ON Semiconductor

SFP9Z34 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

SFP9Z34 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 82W Tc
Element ConfigurationSingle
Power Dissipation82W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1155pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time24ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -60V
Input Capacitance1.155nF
Drain to Source Resistance 140mOhm
Rds On Max 140 mΩ
RoHS StatusRoHS Compliant
In-Stock:3004 items

SFP9Z34 Product Details

SFP9Z34 Description

SFP9Z34is a Power MOSFET which is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.

SFP9Z34 FEATURES


Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

175℃ Opereting Temperature

Extended Safe Operating Area

Lower Leakage Current:-10uA(Max.)@Vs=-60V LowRDS(ON):0.106Ω(Typ.)

SFP9Z34 Applications


low voltageapplications

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