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SI7407DN-T1-GE3

SI7407DN-T1-GE3

SI7407DN-T1-GE3

Vishay Siliconix

MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V

SOT-23

SI7407DN-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Supplier Device Package PowerPAK® 1212-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 12mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Power Dissipation 1.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 400μA
Current - Continuous Drain (Id) @ 25°C 9.9A Ta
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
RoHS Status ROHS3 Compliant

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