SFT1202-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SFT1202-E Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
165mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
140MHz
Frequency - Transition
140MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
7V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.663891
$0.663891
10
$0.626313
$6.26313
100
$0.590861
$59.0861
500
$0.557416
$278.708
1000
$0.525865
$525.865
SFT1202-E Product Details
SFT1202-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V allows for a high level of efficiency.In this part, there is a transition frequency of 140MHz.Maximum collector currents can be below 2A volts.
SFT1202-E Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 165mV @ 100mA, 1A the emitter base voltage is kept at 7V a transition frequency of 140MHz
SFT1202-E Applications
There are a lot of ON Semiconductor SFT1202-E applications of single BJT transistors.