2SB1201S-E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 1A.Emitter base voltages of -6V can achieve high levels of efficiency.The maximum collector current is 2A volts.

2SB1201S-E Features

the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at -6V

2SB1201S-E Applications

There are a lot of ON Semiconductor 2SB1201S-E applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter