MJH11017G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJH11017G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
150W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 10A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 150mA, 15A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
2.5V
Frequency - Transition
3MHz
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
15A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.019360
$12.01936
10
$11.339019
$113.39019
100
$10.697188
$1069.7188
500
$10.091686
$5045.843
1000
$9.520459
$9520.459
MJH11017G Product Details
MJH11017G Overview
This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 150mA, 15A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 3MHz in the part.Maximum collector currents can be below 15A volts.
MJH11017G Features
the DC current gain for this device is 400 @ 10A 5V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 4V @ 150mA, 15A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 3MHz
MJH11017G Applications
There are a lot of ON Semiconductor MJH11017G applications of single BJT transistors.