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SGH30N60RUFTU

SGH30N60RUFTU

SGH30N60RUFTU

ON Semiconductor

SGH30N60RUFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGH30N60RUFTU Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 600V
Max Power Dissipation 235W
Current Rating 30A
Element Configuration Single
Power Dissipation 235W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 48A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Test Condition 300V, 30A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 30A
Gate Charge 85nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/54ns
Switching Energy 919μJ (on), 814μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
SGH30N60RUFTU Product Details

SGH30N60RUFTU Description


Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's RUF series offer reduced conduction and switching losses in addition to short circuit toughness. The RUF series is made for uses where short circuit toughness is necessary, such as motor control, uninterrupted power supply (UPS), and general inverters.



SGH30N60RUFTU Features


? 10us short circuit rating at 100°C and 15V


? Rapid switchover


? Low saturation voltage: 2.2 V at 30 A for VCE(sat).


? Large input resistance



SGH30N60RUFTU Applications


Switching applications


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