SGH30N60RUFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH30N60RUFTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
600V
Max Power Dissipation
235W
Current Rating
30A
Element Configuration
Single
Power Dissipation
235W
Input Type
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
48A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Test Condition
300V, 30A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 30A
Gate Charge
85nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
30ns/54ns
Switching Energy
919μJ (on), 814μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
SGH30N60RUFTU Product Details
SGH30N60RUFTU Description
Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's RUF series offer reduced conduction and switching losses in addition to short circuit toughness. The RUF series is made for uses where short circuit toughness is necessary, such as motor control, uninterrupted power supply (UPS), and general inverters.
SGH30N60RUFTU Features
? 10us short circuit rating at 100°C and 15V
? Rapid switchover
? Low saturation voltage: 2.2 V at 30 A for VCE(sat).