SGL160N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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SGL160N60UFDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 10 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Number of Pins
3
Weight
6.756g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
250W
Current Rating
80A
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Input Type
Standard
Turn On Delay Time
40 ns
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
90 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
160A
Reverse Recovery Time
95 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
150 ns
Test Condition
300V, 80A, 3.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 80A
Turn Off Time-Nom (toff)
262 ns
Gate Charge
345nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
40ns/90ns
Switching Energy
2.5mJ (on), 1.76mJ (off)
Height
26mm
Length
20mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.66000
$9.66
10
$8.75900
$87.59
375
$6.99600
$2623.5
750
$6.40835
$4806.2625
1,125
$5.62478
$5.62478
SGL160N60UFDTU Product Details
Description
The SGL160N60UFDTU is low conduction and switching losses 600V short circuit rated ultrafast IGBT. This UFD series is intended for high-speed switching applications like motor control and general inverters. This item is intended for general use and can be used in a variety of ways. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
● Low saturation voltage
● High input impedance
● High speed switching
● High-current and low-saturation-voltage capability