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SGL160N60UFDTU

SGL160N60UFDTU

SGL160N60UFDTU

ON Semiconductor

SGL160N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGL160N60UFDTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE, NOT REC (Last Updated: 10 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 250W
Current Rating 80A
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 90 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Reverse Recovery Time 95 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 150 ns
Test Condition 300V, 80A, 3.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 80A
Turn Off Time-Nom (toff) 262 ns
Gate Charge 345nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 40ns/90ns
Switching Energy 2.5mJ (on), 1.76mJ (off)
Height 26mm
Length 20mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.66000 $9.66
10 $8.75900 $87.59
375 $6.99600 $2623.5
750 $6.40835 $4806.2625
1,125 $5.62478 $5.62478
SGL160N60UFDTU Product Details

Description


The SGL160N60UFDTU is low conduction and switching losses 600V short circuit rated ultrafast IGBT. This UFD series is intended for high-speed switching applications like motor control and general inverters. This item is intended for general use and can be used in a variety of ways. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.



Features


● Low saturation voltage

● High input impedance

● High speed switching

● High-current and low-saturation-voltage capability

● High current-handling capabilities



Applications


● Power Management

● Motor Drive & Control

● Switched-Mode Power Supplies

● Traction Motor Control

● Induction Heating


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