FGB20N60SFD-F085

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Manufacturer part number:FGB20N60SFD-F085

Manufacturer:ON Semiconductor

Description:FGB20N60SFD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGB20N60SFD-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	208W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	FGB20N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	21ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	208W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	111 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.4V
Max Breakdown Voltage	600V
Turn On Time	28 ns
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 20A
Turn Off Time-Nom (toff)	123 ns
IGBT Type	Field Stop
Gate Charge	63nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	10ns/90ns
Switching Energy	310μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant