Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Base Part Number	STGW40
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	164 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	45 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	64 ns
Test Condition	480V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Turn Off Time-Nom (toff)	338 ns
Gate Charge	135nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	46ns/164ns
Switching Energy	595μJ (on), 716μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGW40NC60KD

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