SMMBT6427LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBT6427LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
MMBT6427
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
12V
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.417000
$0.417
10
$0.393396
$3.93396
100
$0.371129
$37.1129
500
$0.350121
$175.0605
1000
$0.330303
$330.303
SMMBT6427LT1G Product Details
SMMBT6427LT1G Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500μA, 500mA.An emitter's base voltage can be kept at 12V to gain high efficiency.A maximum collector current of 500mA volts can be achieved.
SMMBT6427LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.5V @ 500μA, 500mA the emitter base voltage is kept at 12V
SMMBT6427LT1G Applications
There are a lot of ON Semiconductor SMMBT6427LT1G applications of single BJT transistors.