BUH51G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BUH51G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
800V
Max Power Dissipation
50W
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
3A
Frequency
23MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Transistor Application
SWITCHING
Gain Bandwidth Product
23MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 1A 1V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
500V
Transition Frequency
23MHz
Collector Emitter Saturation Voltage
300mV
Collector Base Voltage (VCBO)
800V
Emitter Base Voltage (VEBO)
10V
hFE Min
8
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.584534
$2.584534
10
$2.438240
$24.3824
100
$2.300226
$230.0226
500
$2.170025
$1085.0125
1000
$2.047193
$2047.193
BUH51G Product Details
BUH51G Overview
In this device, the DC current gain is 8 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 23MHz in the part.The maximum collector current is 3A volts.
BUH51G Features
the DC current gain for this device is 8 @ 1A 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 500mV @ 200mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 3A a transition frequency of 23MHz
BUH51G Applications
There are a lot of ON Semiconductor BUH51G applications of single BJT transistors.