BUH51G Overview

In this device, the DC current gain is 8 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 23MHz in the part.The maximum collector current is 3A volts.

BUH51G Features

the DC current gain for this device is 8 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 3A
a transition frequency of 23MHz

BUH51G Applications

There are a lot of ON Semiconductor BUH51G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter