JANTX2N2907A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N2907A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-206AA (TO-18)
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/291
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Number of Elements
1
Polarity
PNP
Power Dissipation
500mW
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Collector Emitter Saturation Voltage
1.6V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Max Junction Temperature (Tj)
200°C
Height
5.33mm
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
249
$4.32651
$1077.30099
JANTX2N2907A Product Details
JANTX2N2907A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Product comes in TO-206AA (TO-18) supplier package.This device displays a 60V maximum voltage - Collector Emitter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.
JANTX2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1.6V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at 5V the supplier device package of TO-206AA (TO-18)
JANTX2N2907A Applications
There are a lot of Microsemi Corporation JANTX2N2907A applications of single BJT transistors.