SMMBTA13LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.The base voltage of the emitter can be kept at 10V to achieve high efficiency.As a result, the part has a transition frequency of 125MHz.Maximum collector currents can be below 300mA volts.

SMMBTA13LT1G Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

SMMBTA13LT1G Applications

There are a lot of ON Semiconductor SMMBTA13LT1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter