SS8550BTA Overview
In this device, the DC current gain is 85 @ 100mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -280mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at -6V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.In extreme cases, the collector current can be as low as 1.5A volts.
SS8550BTA Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
SS8550BTA Applications
There are a lot of ON Semiconductor SS8550BTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
